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- دیتاشیت SMMBT5551LT3G
SMMBT5551LT3G دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | SMMBT5551LT3G |
|---|---|
| حجم فایل | 87.902 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 7 |
دانلود دیتاشیت SMMBT5551LT3G |
دانلود دیتاشیت |
|---|
سایر مستندات
MMBT5550L-51L, SMMBT5551L 6 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi SMMBT5551LT3G
- Transistor Type: NPN
- Operating Temperature: -55°C~+150°C@(Tj)
- Collector Current (Ic): 600mA
- Power Dissipation (Pd): 225mW
- Transition Frequency (fT): -
- DC Current Gain (hFE@Ic,Vce): 80@10mA,5V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 160V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@50mA,5mA
- Package: SOT-23(TO-236)
- Manufacturer: onsemi
- Series: -
- Packaging: Tape & Reel (TR)
- Part Status: Active
- Current - Collector (Ic) (Max): 600mA
- Voltage - Collector Emitter Breakdown (Max): 160V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Power - Max: 225mW
- Frequency - Transition: -
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
- Base Part Number: SMMBT5
- detail: Bipolar (BJT) Transistor NPN 160V 600mA 225mW Surface Mount SOT-23-3 (TO-236)
